高級檢索

IGBT功率模塊熱管理研究

  • 摘要: 隨著絕緣柵雙極晶體管(IGBT)向高功率和高集成度方向發展,在結構和性能上有很大的改進,熱產生問題日益突出🪽,對散熱的要求越來越高👰,IGBT芯片是產生熱量的核心功能器件,但熱量的積累會嚴重影響器件的工作性能📰。因此,對IGBT模塊的溫度進行有效地檢測和管理是十分重要的環節🥨。綜述了IGBT模塊的研究現狀、研究熱點以及散熱相關技術,主要介紹了主動散熱和被動散熱的方法、以及IGBT功率模塊的熱阻網絡系統和散熱系統設計的主要步驟,和減小熱阻來增強散熱的方法。

     

    Abstract: With the development of insulated gate bipolar transistor (IGBT) towards high power and high integration, great improvement has been made in structure and performance. The problem of heat generation is increasingly prominent, and the requirement of heat dissipation is higher and higher. IGBT chip is the core functional device that generates heat, but the accumulation of heat exerts an adverse effect on the performance of the device. Therefore, it is of great significance to detect and manage the temperature of IGBT module effectively. The research status, research hotspot and heat dissipation technology of IGBT module were summarized, the methods of active and passive heat dissipation were introduced in detail. In order to further understand the thermal management of IGBT module, the main steps of the thermal resistance network system and the cooling system design of IGBT power module, as well as the method of enhancing the cooling by reducing the thermal resistance were introduced.

     

/

返回文章
返回
摩臣5娱乐专业提供👩‍🏫:摩臣5娱乐摩臣5摩臣5平台等服务,提供最新官网平台、地址、注册、登陆、登录、入口、全站、网站、网页、网址、娱乐、手机版、app、下载、欧洲杯、欧冠、nba、世界杯、英超等,界面美观优质完美,安全稳定,服务一流🪚,摩臣5娱乐欢迎您。 摩臣5娱乐官網xml地圖